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| Philips Semiconductors Product specification Logic level TOPFET PIP3106-D DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package. QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) IISL PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance Input supply current VIS = 5 V MAX. 50 8 40 150 100 650 UNIT V A W C m A APPLICATIONS General purpose switch for driving lamps motors solenoids heaters FEATURES TrenchMOS output stage Current limiting Overload protection Overtemperature protection Protection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads FUNCTIONAL BLOCK DIAGRAM DRAIN O/V CLAMP INPUT RIG POWER MOSFET LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - SOT428 PIN 1 2 3 tab input drain source DESCRIPTION PIN CONFIGURATION tab SYMBOL D TOPFET I P 2 drain 1 3 S October 2001 1 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET PIP3106-D LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VDS ID ID II IIRM PD Tstg Tj Tsold PARAMETER Continuous drain source voltage1 Continuous drain current Continuous drain current Continuous input current Non-repetitive peak input current Total power dissipation Storage temperature Continuous junction temperature2 Case temperature CONDITIONS VIS = 5 V; Tmb = 25 C VIS = 5 V; Tmb 110 C tp 1 ms Tmb 25 C normal operation during soldering MIN. -5 -10 -55 MAX. 50 self limited 8 5 10 40 175 150 260 UNIT V A A mA mA W C C C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k MIN. MAX. 2 UNIT kV OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL EDSM EDRM PARAMETER Inductive load turn-off Non-repetitive clamping energy Repetitive clamping energy CONDITIONS IDM = 8 A; VDD 20 V Tmb 25 C Tmb 95 C; f = 250 Hz MIN. MAX. 100 20 UNIT mJ mJ OVERLOAD PROTECTION LIMITING VALUE With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload - overtemperature and short circuit load. SYMBOL VDS PARAMETER Drain source voltage 3 REQUIRED CONDITION 4 V VIS 5.5 V MIN. 0 MAX. 35 UNIT V THERMAL CHARACTERISTIC SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance Junction to mounting base Junction to ambient CONDITIONS minimum footprint FR4 PCB MIN. TYP. 2.5 70 MAX. 3.1 UNIT K/W K/W 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 All control logic and protection functions are disabled during conduction of the source drain diode. October 2001 2 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET PIP3106-D OUTPUT CHARACTERISTICS Limits are for -40C Tmb 150C; typicals are for Tmb = 25 C unless otherwise specified SYMBOL PARAMETER Off-state V(CL)DSS IDSS Drain-source clamping voltage CONDITIONS VIS = 0 V ID = 10 mA IDM = 1 A; tp 300 s; 0.01 Drain source leakage current On-state RDS(ON) Drain-source resistance VDS = 40 V Tmb = 25 C IDM = 3 A; tp 300 s; 0.01 VIS 4.4 V Tmb = 25 C VIS 4 V Tmb = 25 C 68 72 190 100 200 105 m m m m 50 50 60 0.1 70 100 10 V V A A MIN. TYP. MAX. UNIT OVERLOAD CHARACTERISTICS -40C Tmb 150C unless otherwise specified. SYMBOL ID PARAMETER Short circuit load Drain current limiting CONDITIONS VDS = 13 V VIS = 5 V; 4.4 V VIS 5.5 V 4 V VIS 5.5 V PD(TO) TDSC Tj(TO) Overload protection Overload power threshold Characteristic time Overtemperature protection Threshold junction temperature2 150 170 C VIS = 5 V; Tmb = 25C device trips if PD > PD(TO) which determines trip time1 Tmb = 25C MIN. 8 6 5 20 200 TYP. 12 55 350 MAX. 16 18 18 80 600 UNIT A A A W s 1 Trip time td sc varies with overload dissipation PD according to the formula td sc TDSC / ln[ PD / PD(TO) ]. 2 This is independent of the dV/dt of input voltage VIS. October 2001 3 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET PIP3106-D INPUT CHARACTERISTICS The supply for the logic and overload protection is taken from the input. Limits are for -40C Tmb 150C; typicals are for Tmb = 25C unless otherwise specified SYMBOL VIS(TO) IIS IISL VISR tlr V(CL)IS RIG PARAMETER Input threshold voltage Input supply current Input supply current Protection reset voltage1 Latch reset time Input clamping voltage Input series resistance to gate of power MOSFET 2 CONDITIONS VDS = 5 V; ID = 1 mA Tmb = 25C normal operation; protection latched; reset time tr 100 s VIS1 = 5 V, VIS2 < 1 V II = 1.5 mA Tmb = 25C VIS = 5 V VIS = 4 V VIS = 5 V VIS = 3 V MIN. 0.6 1.1 100 80 200 130 1.5 10 5.5 - TYP. 1.6 220 195 400 250 2 40 33 MAX. 2.4 2.1 400 330 650 430 2.9 100 8.5 - UNIT V V A A A A V s V k SWITCHING CHARACTERISTICS Tmb = 25 C; VDD = 13 V; resistive load RL = 4 . Refer to waveform figure and test circuit. SYMBOL td on tr td off tf PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time VIS = 0 V CONDITIONS VIS = 5 V MIN. TYP. 10 20 30 20 MAX. 20 40 60 40 UNIT s s s s 1 The input voltage below which the overload protection circuits will be reset. 2 Not directly measureable from device terminals. October 2001 4 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET PIP3106-D MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E b2 A A1 mounting base A2 D1 E1 D HE L2 2 L L1 1 b1 e e1 b 3 wM A c 0 10 scale 20 mm DIMENSIONS (mm are the original dimensions) A UNIT max. mm 2.38 2.22 A1(1) 0.65 0.45 A2 0.89 0.71 b 0.89 0.71 b1 max. 1.1 0.9 b2 5.36 5.26 c 0.4 0.2 D1 E D max. max. max. 6.22 5.98 4.81 4.45 6.73 6.47 E1 min. 4.0 e e1 HE max. 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.7 0.5 w 0.2 y max. 0.2 2.285 4.57 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-04-07 Fig.2. SOT428 surface mounting package1, centre pin connected to mounting base. 1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.1 g For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18. October 2001 5 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET PIP3106-D DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS1 Objective data PRODUCT STATUS2 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Preliminary data Qualification Product data Production Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. October 2001 6 Rev 1.000 |
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